(1)
Asghar Ali Gill, (1994)
Study
of the Deep Levels Associated with Pt and Pd Centres in Si and Mid-gap
Centres in GaP.
Curreent
Position:
Employed
with NORTEL, Canada
(2)
Muhammad Asghar, (1994)
Deep-level
Transient Spectroscopy of Radiation-induced Defects and their Complexes
in Silicon.
Curreent
Position:
Assistant
Professor, Department of Physics, Islamia University, Bahwalpure, Pakistan.
(3)
Nawazish Ali Khan, (1995)
Synthesis
and Characterization of homologues Y-Ba-Cu (123) High Temperature Superconductor
using Cuprous Cyanide.
Curreent
Position:
Assistant
Professor, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan.
(4)
Umar Saeed Qurashi, (1996)
Study
of Defect Characteristics in some Technologically Important Compound Semiconductors.
Curreent
Position:
Assistant
Professor, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan.
(5)
Akbar Ali, (1996)
Study
of Irradiation and Thermal Annealing Effects on Transition-metal Related
Deep Levels in Silicon.
Curreent
Position:
Assosiate
Professor, Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan.
(1)
M. Anwar Butt, (1983)
Dark
Capacitance Study of Deep Levels in GaP LED's.
(2)
Muhammad Waris, (1983)
Growth
and Characterization of Germanium Single Crystal.
(3)
Mohammed Arshed, (1984)
Analysis
of Bias-Induced Capacitance Transient in GaP LED's.
(4)
Mushtaq Ahmad, (1986)
Dark
Transient Capacitance Study of Deep Levels in Green- Emitting GaP LED's.
(5)
Abdul Jabbar, (1986)
Thermally
Stimulated Capacitance (TSCAP) Study of Deep Levels in GaP.
(6)
Muhammad Asghar, (1987)
Characterization
of Si, Ge, Diodes from (I-V) Measurements.
(7)
Muhammad Saeed (1987)
Sensitive
Thermometry using Capacitance Measurements of Si, Ge, Diodes.
(8)
Asghar Ali, (1987)
Characterization
of a Mid-Gap Deep Electron Level in GaP.
(9)
Umar Saeed Qurashi, (1988)
Deep
Level Transient Spectroscopy on Red Emitting GaP LED's.
(10)
Nawasih Ali Khan (1989)
Fabrication
and Characterization of some High Temperature Superconductors.
(11)
Naseer Ahmed (1989)
Scanning
Electron Microscopy of High Temperature Superconductors.
(12)
Ata-ul-Habib Khalid, (1990)
Capture
Cross-Section Measurements on Deep Levels in Semiconductors.
(13)
Shazia Afzal, (1991)
FTIR
Spectroscopy of High Temperature Superconductors.
(14)
Zafar Waqar, (1994)
Photocapacitance
Measurements on Semiconductors.
(15)
Abdul Muqeet, (1994)
Hole
Capture cross section of Pd-related electron level in P-Silicon.
(16)
Aurangzeb Khan, (1994)
Deep
Levels in Alpha Irradiated InP.
(17)
Nasir Pervaiz, (1994)
Synthesis
and Characterization of Y1-xCaxBa2Cu4O8
High Temperature Superconductors.
(18)
Kausar Shaheen, (1995)
Synthesis
and Characterization of 124 Superconductors.
(19)
Ahmed Tahir Naveed, (1995)
Computerized
DLTS Study of defects in Semiconductors.
(20)
Syed Zia-ul-Hasnain, (1995)
Photoluminescence
Characterization study of Compound Semiconductors.
(21)
Imran Asghar, (1995)
Photoluminescence
study of defects in Silver Doped Silicon.
(22)
Shazia Parveen, (1997)
Electrical
and Optical Deep-level Spectroscopy on Transition Metal Doped InP.
(23)
Khalid Mahmood Khalid, (1997)
Photoluminescence
Study of the Effects of Alpha-radiation on InP.
(24)
Muhammad Yar (1998)
Study
of Deep Levels in AlxGa1-xAs and Effects of Alpha-Irradiation
on them.
(25)
Muhammad Abdul Rauf Khan (2000)
Characterization
of Defects in Silicon using FTIR Absorption Spectroscopy.
(26)
Shah Haider Khan (2001)
Deep
level transient spectroscopy study of Rhodium in GaAs.
