I.  Silicon 
(a) Transition-metal related deep-level defects 
(b) Alpha-radiation induced defects
(c) Complexes of the above two types of defects
(d) Annealing Kinetics of defects

Transition-metal related deep levels have been studied in Si for a long time but little is 
known about their exact microscopic identities. We have studied defects produced by 
TMs from 3d(Fe), 4d(Ag, Pd) and  5d(Pt, Au) groups in Si. We have used irradiation as a probe for investigating the microscopic nature of the TM-related defects. The results can be found in our research publications.

II.  Compound Semiconductors
(a) III-V: GaP, GaAs, GaAsP, AlGaAs, InP
(b) II-VI: ZnSe

Work in this area has focussed on different aspects of importance for the respective materials and has been conducted in collaboration with several international research groups. The most recent work on InP has led to the MOCVD growth of thermally stable semiinsulating InP for the first time. Results of our work on compound semiconductors are to be found in our research publications.

III. High Temperature Superconductors

The SPL has also actively participated in research in this exciting field for some years soon after its discovery in 1987 and has published a number of papers in internationals journals besides producing one Ph.D. and some M.Phil. theses. The activity in this area has been lately discontinued. 

IV. Porous Silicon

Porous silicon prepared by different etching techniques is newly started field in SPL. Our focus is its preparation and characterization for its potential industrial use.